Chebel , MounaHadef , ZkariaSASSANE , Nacira2025-09-302025-09-302025-07-01http://dspace.univ-skikda.dz:4000/handle/123456789/5121Ultrasonic spray pyrolysis (USP) technique has been used to deposit pure and magnesium (Mg) incorporation Tin Sulfide (SnS: Mg) thin films at 350 °C by varying the Mg impurities concentration (2%, 4%, 6% and 8%). X -ray diffraction patterns confirm the orthorhombic crystal structure of SnS: Mg thin films. Structural parameters such as crystallite size, micro strain and dislocation density were determinated. The optical band gap energy was determinates by measuring the transmission which showed a low value of 1.59 eV with a strong emission peak of photoluminescence spectra observed at 421 nm for 6% of Mg incorporation concentration. Hall Effect measurement confirms the p-type conductivity of the SnS: Mg film and presented a very low resistivity of 1.58 × 10−2 Ω cm with the high mobility of 21.54 cm2/Vs and very high carrier concentration of 1.47 × 1019 cm −3 for 6 at. % of SnS: Mg thin film.enSynthesis and Characterization of Mg-Doped SnS Thin Films for Photovoltaic ApplicationsMaterials physicsMasters degree thesis